ret y rt - silicon zener diodes - low profile surface-mount package - zener and surge current specification - low leakage current - excellent stability - aec-q101 qualified (green compound not involved) - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v f volts r ja /w r jl /w t j , t stg document number: ds_d1401027 version: u14 operating and storage temperature range -55 to +175 non-repetitive peak pulse power dissipation 10/1000 s waveform (bzd27c6v8p to bzd27c100p) (note 2) non-repetitive peak pulse power dissipation 10/1000 s waveform (bzd27c110p to bzd27c220p) (note 2) p rsm 100 watts note 1: mounted on cu-pad size 5mm x 5mm note 2: t j =25 prior to surge thermal resistance junction to ambient (note 1) 180 thermal resistance junction to lead 30 non-repetitive peak pulse power dissipation 100 s square pulse (note 2) p zsm 300 watts p rsm 150 watts power dissipation at t l =80 t a =25 (note 1) ptot polarity: indicated by cathode band weight: 0.019g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er sy m bol 2.31.0 watts v alu e - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: sub sma sub sma u n i t forward voltage @ i f =0.2a 1.2 bzd27c series taiwan semiconductor v olta g e re g ulator diodes feat u res - moisture sensitivity level: level 1, per j-std-020 downloaded from: http:///
part n o. part n o. bzd27c10p bzd27c10p (ta=25 unless otherwise noted) document number: ds_d1401027 version: u14 3,000 / 7" plastic reel (8mm tape) 1,800 / 7" plastic reel (8mm tape) pack i n g green compound descri pt i on 10,000 / 13" plastic reel (12mm tape) 10,000 / 13" paper reel (12mm tape) 7,500 / 13" plastic reel (12mm tape) rat i n gs an d ch aract eri st i cs cu rv es bzd27c10p ru ru bzd27c10p rug ru g mh sub sma note 1: "xx" defines voltage from 6.8v (bzd27c6v8p) to 220v (bzd27c220p) ex am ple preferred p/n pack i n g code green com pou n d code bzd27cxxp (note 1) ru sub sma m2 sub sma rh sub sma rf sub sma r2 sub sma 3,000 / 7" plastic reel (12mm tape) mq sub sma r3 sub sma 1,800 / 7" plastic reel (12mm tape) 10,000 / 13" plastic reel (8mm tape) mt sub sma rq sub sma 10,000 / 13" paper reel (8mm tape) 7,500 / 13" plastic reel (8mm tape) suffix "g" sub sma rv 7,500 / 13" paper reel (12mm tape) rt bzd27c series taiwan semiconductor orderi n g i n form at i on pack i n g code green com pou n d code pack age sub sma 7,500 / 13" paper reel (8mm tape) 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 power dissipation(w) ambient temperature( o c) fig.3 power dissipation vs ambient temperature 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 typ. junction capacitance (pf) reverse voltage fig. 2 typ. diode capacitance vs reverse voltage c12p c27p c200p c6v8p 0.1 1 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 instantaneous forward current (a) forward voltage (v) fig. 1 typical forward characteristics typ. vf max. vf 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 max pulse power dissipation (w) zener voltage (v) fig. 4 maximum pulse power disspation vs zener voltage downloaded from: http:///
test current i zt i r v r ma av min. max. typ. max. min. max. max. bzd27c6v8p d7 6.4 7.2 1 3 0 0.07 100 10 3 bzd27c7v5p d8 7.0 7.9 1 2 0 0.07 100 50 3 bzd27c8v2p d9 7.7 8.7 1 2 0.03 0.08 100 10 3 bzd27c9v1p e0 8.5 9.6 2 4 0.03 0.08 50 10 5 bzd27c10p e1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 bzd27c11p e2 10.4 11.6 4 7 0.05 0.10 50 4 8.2 bzd27c12p e3 11.4 12.7 4 7 0.05 0.10 50 3 9.1 bzd27c13p e4 12.4 14.1 5 10 0.05 0.10 50 2 10 bzd27c15p e5 13.8 15.6 5 10 0.05 0.10 25 1 11 bzd27c16p e6 15.3 17.1 6 15 0.06 0.11 25 1 12 bzd27c18p e7 16.8 19.1 6 15 0.06 0.11 25 1 13 bzd27c20p e8 18.8 21.2 6 15 0.06 0.11 25 1 15 bzd27c22p e9 20.8 23.3 6 15 0.06 0.11 25 1 16 bzd27c24p f0 22.8 25.6 7 15 0.06 0.11 25 1 18 bzd27c27p f1 25.1 28.9 7 15 0.06 0.11 25 1 20 bzd27c30p f2 28 32 8 15 0.06 0.11 25 1 22 bzd27c33p f3 31 35 8 15 0.06 0.11 25 1 24 bzd27c36p f4 34 38 21 40 0.06 0.11 10 1 27 bzd27c39p f5 37 41 21 40 0.06 0.11 10 1 30 bzd27c43p f6 40 46 24 45 0.07 0.12 10 1 33 bzd27c47p f7 44 50 24 45 0.07 0.12 10 1 36 bzd27c51p f8 48 54 25 60 0.07 0.12 10 1 39 bzd27c56p f9 52 56 25 60 0.07 0.12 10 1 43 bzd27c62p g0 58 66 25 80 0.08 0.13 10 1 47 BZD27C68P g1 64 72 25 80 0.08 0.13 10 1 51 bzd27c75p g2 70 79 30 100 0.08 0.13 10 1 56 bzd27c82p g3 77 82 60 200 0.08 0.13 10 1 62 bzd27c91p g4 85 91 60 200 0.08 0.13 5 1 68 bzd27c100p g5 94 106 60 200 0.09 0.13 5 1 75 bzd27c110p g6 104 110 80 250 0.09 0.13 5 1 82 bzd27c120p g7 114 127 150 300 0.09 0.13 5 1 91 bzd27c130p g 124 141 150 300 0.09 0.13 5 1 100 bzd27c150p g9 138 156 150 300 0.09 0.13 5 1 110 bzd27c160p h0 153 171 150 350 0.09 0.13 5 1 120 bzd27c180p h1 168 191 280 450 0.09 0.13 5 1 130 bzd27c200p h2 188 212 350 750 0.09 0.13 5 1 150 bzd27c220p h3 208 233 430 900 0.09 0.13 5 1 160 notes: 1. pulse test: tp Q 5ms. document number: ds_d1401027 version: u14 bzd27c series taiwan semiconductor reverse current@ reverse voltage alph z @ i z ? temperature coefficient %/ differential resistance r dif @ i z device device marking code working voltage (note 1) v z @ i zt v downloaded from: http:///
v (br) @i test i test vc @i rsm (note 1) i r @v wm vm a v a av min. min. max max. max. bzd27c7v5p 7 100 0 0.07 11.3 13.3 1500 6.2 bzd27c8v2p 7.7 100 0.03 0.08 12.3 12.2 1200 6.8 bzd27c9v1p 8.5 50 0.03 0.08 13.3 11.3 100 7.5 bzd27c10p 9.4 50 0.05 0.09 14.8 10.1 20 8.2 bzd27c11p 10.4 50 0.05 0.10 15.7 9.6 5 9.1 bzd27c12p 11.4 50 0.05 0.10 17 8.8 5 10 bzd27c13p 12.4 50 0.05 0.10 18.9 7.9 5 11 bzd27c15p 13.8 50 0.05 0.10 20.9 7.2 5 12 bzd27c16p 15.3 25 0.06 0.11 22.9 6.6 5 13 bzd27c18p 16.8 25 0.06 0.11 25.6 5.9 5 15 bzd27c20p 18.8 25 0.06 0.11 28.4 5.3 5 16 bzd27c22p 20.8 25 0.06 0.11 31 4.8 5 18 bzd27c24p 22.8 25 0.06 0.11 33.8 4.4 5 20 bzd27c27p 25.1 25 0.06 0.11 38.1 3.9 5 22 bzd27c30p 28 25 0.06 0.11 42.2 3.6 5 24 bzd27c33p 31 25 0.06 0.11 46.2 3.2 5 27 bzd27c36p 34 10 0.06 0.11 50.1 3 5 30 bzd27c39p 37 10 0.06 0.11 54.1 2.8 5 33 bzd27c43p 40 10 0.07 0.12 60.7 2.5 5 36 bzd27c47p 44 10 0.07 0.12 65.5 2.3 5 39 bzd27c51p 48 10 0.07 0.12 70.8 2.1 5 43 bzd27c56p 52 10 0.07 0.12 78.6 1.9 5 47 bzd27c62p 58 10 0.08 0.13 86.5 1.7 5 51 BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56 bzd27c75p 70 10 0.08 0.13 103.5 1.5 5 62 bzd27c82p 77 10 0.08 0.13 114 1.3 5 68 bzd27c91p 85 5 0.09 0.13 126 1.2 5 75 bzd27c100p 94 5 0.09 0.13 139 1.1 5 82 bzd27c110p 104 5 0.09 0.13 150 1 5 91 bzd27c120p 114 5 0.09 0.13 152 0.9 5 100 bzd27c130p 124 5 0.09 0.13 185 0.81 5 110 bzd27c150p 138 5 0.09 0.13 205 0.73 5 120 bzd27c160p 153 5 0.09 0.13 224 0.67 5 130 bzd27c180p 168 5 0.09 0.13 229 0.6 5 150 bzd27c200p 188 5 0.09 0.13 254 0.54 5 160 bzd27c220p 208 5 0.09 0.13 279 0.35 5 176 notes: 1. non-repetitive peak reverse current in accordance with "iec 60-1, section 8" (10/1000 s pulse) document number: ds_d1401027 version: u14 bzd27c series taiwan semiconductor reverse current@ stand-off voltage device alphz@i test %/ rev. breakdown voltage test current temperature coefficient clamping voltage downloaded from: http:///
min max min max b 1.70 1.90 0.067 0.075 c 2.70 2.90 0.106 0.114 d 0.16 0.30 0.006 0.012 e 1.23 1.43 0.048 0.056 f 0.80 1.20 0.031 0.047 g 3.40 3.80 0.134 0.150 h 2.45 2.60 0.096 0.102 i 0.35 0.85 0.014 0.033 j 0.00 0.10 0.000 0.004 p/n = marking code g = green compound yw = date code f = factory code document number: ds_d1401027 version: u14 m ark i n g di agram unit (inch) 0.0550.047 0.122 0.075 0.169 c3 . 1 d1 . 9 e4 . 3 su ggest ed pad lay ou t symbol unit (mm) a1 . 4 b1 . 2 bzd27c series taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1401027 version: u14 bzd27c series taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///
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